Product Overview

AS7C34096A-12JIN is a high-performance CMOS 4,194,304-bit static random access memory (SRAM) device organized as 524,288 words 8bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal address access and cycle times (tAA, tRC, tWC) of 10/12/15/20 ns with output enable access times (tOE) of 4/5/6/7 ns are ideal for high-performance applications. The chip enable input CE permits easy memory expansion with multiple-bank memory systems. When active-low CE is high the device enters standby mode. The device is guaranteed not to exceed 28.8mW power consumption in CMOS standby mode. All chip inputs and outputs are TTL-compatible, and operation is from a single 3.3V supply voltage.

• Organization: 524,288 words 8bits, centre power and ground pins
• High speed, equal access and cycle times
• Low power consumption, 650mW/max at 10ns active, 28.8mW/max CMOS standby
• Easy memory expansion with active-low CE, active-low OE inputs
• TTL-compatible, three-state I/O
• ESD protection ? 2000volts
• Latch-up current ? 200mA
• Access time is 12ns
• SOJ 400 mil package
• Industrial temperature range from -40C to 85C

Product details

Technical Specifications

SRAM Type

Asynchronous

Memory Configuration

512K x 8bit

No. of Pins

36Pins

Supply Voltage Max

3.6V

Clock Frequency Max

–

Operating Temperature Min

-40C

Product Range

–

SVHC

No SVHC (27-Jun-2024)

Memory Density

4Mbit

IC Case / Package

SOJ

Supply Voltage Min

3V

Supply Voltage Nom

3.3V

IC Mounting

Surface Mount

Operating Temperature Max

85C

MSL

MSL 3 – 168 hours

Other details

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