Product Overview

AS4C16M16SA-7BCN 256Mb SDRAM is a high-speed CMOS synchronous DRAM containing 256Mbits. It is internally configured as 4 Banks of 4M word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Read and write accesses to SDRAM are burst-oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command which is then followed by a read or write command. An auto precharge function may be enabled to provide a self-timed row precharge that is initiated at the end of the burst sequence. By having a programmable mode register, the system can choose most suitable modes to maximize its performance. It is well suited for applications requiring high memory bandwidth and particularly well suited to high-performance PC applications.

• Fast access time from clock: 5/5.4ns, fully synchronous operation
• Internal pipelined architecture, 4M word x 16-bit x 4-bank
• Programmable mode registers, CAS latency: 2 or 3, burst length: 1, 2, 4, 8, or full page
• Burst type: sequential or interleaved, burst stop function
• Auto refresh and self refresh, 8192 refresh cycles/64ms
• CKE power down mode, LVTTL interface
• Single +3.3V 0.3V power supply
• 143MHz frequency
• 54 ball TFBGA package
• Commercial temperature range from 0 to 70C

Product details

Technical Specifications

DRAM Type

SDRAM

Memory Configuration

16M x 16bit

IC Case / Package

TFBGA

Supply Voltage Nom

3.3V

Operating Temperature Min

0C

Product Range

–

SVHC

No SVHC (27-Jun-2024)

Memory Density

256Mbit

Clock Frequency Max

143MHz

No. of Pins

54Pins

IC Mounting

Surface Mount

Operating Temperature Max

70C

MSL

MSL 3 – 168 hours

Other details

All product and company names are trademarks or registered trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them.