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ALLIANCE MEMORY AS4C256M16MD4V-062BAN DRAM, Mobile LPDDR4X, 4 GB, 256M x 16bit, 1.6 GHz, TFBGA, 200 Pins

$104.77 $209.53
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SKU: ELEC-EA879C
Category: Element

Product Overview

AS4C256M16MD4V-062BAN is a LPDDR4X SDRAM. It is organized as 1 or 2 channels per device, and individual channel is 8-banks and 16-bits. This product uses a double-data-rate architecture to achieve high-speed operation. The double data rate architecture is essentially a 16n prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. This product offers fully synchronous operations referenced to both rising and falling edges of the clock. The data paths are internally pipelined and 16n bits prefetched to achieve very high bandwidth.

  • 256Mx16 org, 1600MHz maximum clock frequency
  • LVSTL (low voltage swing terminated logic) I/O interface
  • Selectable output drive strength (DS), 16-bit pre-fetch DDR data bus
  • Single data rate (multiple cycles) command/address bus
  • Bidirectional/differential data strobe per byte of data (DQS, DQS)
  • DMI pin support for write data masking and DBI functionality
  • Programmable READ and WRITE latencies (RL/WL)
  • Support non-target DRAM ODT control, on-chip temperature sensor to control self refresh rate
  • On-chip temperature sensor whose status can be read from MR4
  • Automotive temperature range from -40C to 105C, 200-ball FBGA package

Product details

DRAM Type Mobile LPDDR4X
Memory Configuration 256M x 16bit
IC Case / Package TFBGA
Supply Voltage Nom 1.8V
Operating Temperature Min -40C
Product Range –
SVHC No SVHC (04-Feb-2026)
Memory Density 4GB
Clock Frequency Max 1.6GHz
No. of Pins 200Pins
IC Mounting Surface Mount
Operating Temperature Max 105C
MSL MSL 3 – 168 hours

Other details

Brand ALLIANCE MEMORY
Part Number AS4C256M16MD4V-062BAN
Quantity Each
Technical Data Sheet (3.17MB) EN View or download

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